An Mn3Sn homo-junction enables efficient field-free full switching of chiral antiferromagnets with greatly reduced power consumption, advancing their potential for energy-efficient magnetic memory devices with advantages of ultradense integration and ultrafast speed.
Виктория Кондратьева (Редактор отдела «Мир»)
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Riot police use teargas to disperse people gathering around wreckage of plane loaded with money from central bank
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